DFF11N60,MOSFET: 1,VDSS:600V; 2,RDS(ON) ):0.73 ohm; 3,Id:10.6 A; Package:TO-220F; 4,Certification:RoHS etc..

11N60,MOSFET Transistor:

1,Part Number:DFF10N60;2,Drain to Source Voltage(VDSS):600V;3,Static Drain-Source On-state Resistance(RDS(ON) ):0.73 ohm;4,Continuous Drain Current(@TC = 25'C)(Id):10.6 A;5,Package:TO-220F;Axial lead;N-Channel MOSFET;6,Certification:RoHS Conformance etc..

7,Features :RDS(on) (Max 0.73 Ω)

Gate Charge (Typical 47nC)Improved dv/dt CapabilityHigh ruggedness100% Avalanche TestedRoHS CompliableHalogen Free available

8,General Description :This N-channel enhancement mode field-effect power transistorusing DI semiconductor’s advanced planar stripe, DMOStechnology intended for off-line switch mode power supply.Also, especially designed to minimize rds(on) and high ruggedavalanche characteristics.The TO-220 & TO220 full packages are well suited for chargerSMPS and small power inverter application.

11N60 MOSFET Transistor