Diameter(mm)

50.8~127

Material

monocrystalline silicon wafer

       Growth method

FZ

Dia.& tolerance (mm)

X±0.1

Type/Dopant

N-Type(NTD)

Orientation

‹111› / ‹100›

Resistivity(Ω.cm)

15--1000

RRG(%)

<6

Oxygen content (at cm-3 )

≤1×1016

Carbon content (at cm-3 )

≤2×1016

Thickness tolerance (um)

According to the customer

TTV(um

≤5 / Or according to the customer

BOW(um)

≤15/ Or according to the customer