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10ms Xenon Lamp Sun Simulator
10ms Xenon Lamp Sun Simulator
Supplier Info
[China Supplier]
Contact Person : Ms. Zhou Edy
Tel : 86-27-87970507-632
Fax : 86-27-87505027 87970506 Address: No.16,Wuhan University Park Road,Wuhan East Lake High-tech Development Zone,Hubei,China Zip: 430223 Country/Region: China (Mainland) Province/State: Hubei
Product Detail
1. Intensity: 0.7 to 1.2 sun 2. Uniformity: <3% 3. STI: <2%; LTI : <2% 4. Pulse duration: 10ms 5. Test area: 200*200mm

Applicaitions:

Electric performance test and on the file for Mono-Si or Poly-Si solar cells.

Equipment Features:

-- 4-line survey and 14-byte 4-channel high-speed synchronous acquisition card;

-- 10 preferences on display and testing data illustration in terms of sheets and curves;

-- Automatically temperature compensating;

-- Vocal test reportng and screen counter for flashes

-- Xenon lamp imported from Germany;

Technical Specification:

ItemsGSCT-B
 Lamp Spectrum IEC60904-9

 Light intensity

 1000W/M²(700~1200W/M² continuous adjustable )

 Uniformity of Irradiation

 ≤3% [Class A]

 Temperal Instability

STI≤2%; LTI≤2% [Class A]

 Consistency of Testing

 ≤0.5%

 Pulse Duration

 10 ms

 Effective Testing Area

 200mm×200mm

 Measuring voltage

 0~0.8V (resolution 1mV)

 Measuring current 0~20A (resolution 1mA)

Test Parameters

Isc,Voc,Pmax,Vm,Im,FF,EFF,Temp,Rs,Rsh,Ir

Data acquisition

4-bit 4-channel high-speed synchronous acquisition card

Options:

Special design for 2 Bus-bar, 3 Bus-bar, or other cell metallization forms orientated as options. 

10ms Xenon Lamp Sun Simulator

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