4"SSP 1.Single side polished 2.High Purity 11N 3.Growth Method :CZ 4.Orientation:<111>/<110>/<100>

4"SSP

IC Grade Mono Silicon Wafer (single side polished )
Size	4"/5"/6"
Growth method	CZ
Grade	Prime grade
Diameter	100±0.4mm / 125±0.5mm / 150±0.5mm
Orientation	<111>/<100>
Type	N-type/P-type
Dopant	P-type:Boron
	N-type:Phos./As./Sb.
Purity	11N(99.999999999%)
Oxygen Content	≤18 New PPMA
Carborn Content	≤1 New PPMA
Resistivity	≥0.001Ω·cm
Thickness	≥200um, or according to your requirement
Others	TTV≤10um, Bow≤35um,Warp≤35um
Particles	≥0.3um@≤10PPW
Surface	Frond side polished,back side etched.
MOQ	100pcs
Package	Packed in cassette,and sealed in vacuum bag,25pcs/cassette.
Price	According to your specification,especially resistivity and thickness

IC grade SSP mono silicon wafers