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Features: 1) All-diffused structure2) Interdigitated amplifying gate configuration3) VTM<1.45V at 25°C, 2,000A4) High DV/DT capability; blocking capability up to 2000V 5) For inverter and chopper applications Specifications at 125°C:1) Tq = 100us 2) VTM≤1.45V at 25°C, 2,000A3) VRRM/VDRM : 1200-2000V
Inverter Thyristor GDC770