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Growth method: CZDiameter(mm) : 76.2---200Dia.& tolerance(mm): X±0.2Type/Dopant: P-Type/Boron N-Type/Phosphorus/Arsenic/AntimonyOrientation: <100> / <111>Resistivity(Ω.cm) : 0.001---80RRG(%): P-Type<10% N-Type<25%Oxygen content (at cm-3 ): ≤1×1017Carbon content (at cm-3 ) : ≤5×1016Thickness & tolerance (um): According to the customerSilicon wafer