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Dimension | 156 mm*156mm |
Growth Method | CZ |
Conductive Type | P |
Dopant | Boron |
Orientation | <100> |
Off Orientation | <±2° |
Resistivity | 0.5 –3 Ω•cm |
Bulk Lifetime | ≥10μs |
Oxygen Content | ≤1.8*1018 /cm3 |
Carbon Content | ≤5.0*1016 /cm3 |
Dimension | 156*156±0.5mm |
Diagonal | 200±0.5mm |
Square Sides Angle | 90±0.25° |
Streight Sections Length Deviation | 21.81±1.0mm |
Thickness | 200±20 μm(thinnest≥180μm) |
TTV | ≤30μm |
Saw Mark | ≤15μm |
Warp | ≤40μm |
Chips | Depth<0.3mm;Length<0.5mmless than 2pcs |
Appearance | No Stain, No Pinhole and Cracks byVisual Inspection |
Dislocation Density | ≤1000 pcs/cm2 |
Mono Solar Wafer 156mm