Welcome to ECOL - Join Free - Sign In
InGaAs Photodiode diode 1mm
InGaAs Photodiode diode 1mm
Supplier Info
[China Supplier]
Contact Person : Mr. Zhou CM
Tel : 86-27-67845126
Fax : 86-27-67845129
Product Detail
Responsivity@1310nm > 0.8A/W Operating Wavelength: 800~1700nm Active Area: 1000um TO46 Package Low Dark Current

Features:

High Responsivity

Low Dark Current

High Linearity

High Stability

TO46 Package

Application:

Optical Communication System

CATV

Test Instruments

 

Specification:

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Responsivity@1310nm

R

VR=-5V

0.8

0.85

-

A/W

Dark Current

Id

VR=-5V

-

-

10

nA

Operating Wavelength

λ

-

800

-

1700

nm

Linearity Range

LR

VR=-5V

-65

-

3

dBm

Active Area(Dia.)

φ

 

-

-

1000

-

um

Rise/Fall Time

Tr/Tf

VR=-5V

-

10

-

ns

Junction Capacitance

C

VR=-5V

-

100

150

pf

Absolute Maximum Ratings:

Parameter 

Symbol

Value

Unit

Reverse Voltage

VR

30

V

Operating Temperature

TOP

-0 ~ +70

°C

Storage Temperature

TST

-40 ~ +85

°C

  

Mechanical Dimension:

InGaAs Photodiode diode 1mm

Ads by Google

Hot Products: A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | 0-9
Copyright Notice @ 2008-2022 ECOL Limited and/or its subsidiaries and licensors. All rights reserved.