parameter

2'',4''

Diameter (Φmm)

50.8+/-0.20mm,100+/-0.20mm

Thickness (mm)

430+/-20um,650+/-25um

surface orientation

C-Axis(0001),off-set Angle 0.2+/-0.1degree

primary flat orientation

A-Axis(11-20),off set angle 0+/-0.1degree

primary flat length

16+/-1.0mm,30+/-1.0mm

back surface roughness

0.5-1.2um

TTV/GBIR

<=5,15um

wafer edge

round

pattern height

1.6+/-0.15um

pattern top dia

<0.2um

 pattern  bottom dia

 2.6+/-0.15um

 pattern spacing

 0.4+/-0.15um

 edge exclusion

 <=2mm