Parameter name

symbol

unit

values

conditions

IGBT

Collector-emitter voltage

VCES

V

1200

DC-collector current

IC

A

300 (200)

TC＝25(80)

Repetitive peak current

ICRM

A

600 (400)

TC＝25(80), tp＝1ms

Gate-emitter peak voltage

VGES

V

±20

Operation temperature

Top

－40～＋125

Storage temperature

Tstg

－40～＋150

Insulation test voltage

VISOL

V

2500

RMS, 1min, 50Hz

Inverse diode

DC-forward current

IF

A

300 (200)

TC＝25(80)

Repetitive peak forward voltage

IFRM

A

600 (400)

TC＝25(80), tp＝1ms

Forward surge current

IFSM

A

1800

tp＝10ms, sin, Tj＝125