Features..Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A..Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A..Advanced Package and Silicon combination for low rDS(on) and high efficiency..MSL1 robust package design..100% UIL tested..100% Rg tested..RoHS CompliantGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench. process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Application..DC-DC Conversion

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Fairchild FDMS86101 8-PQFN