830nm laser diode C-mount/CT-mount/TO3 Efficient quantum well structure Narrow emitting region Center Wavelength:830nm

Parameter	Value
	AL0830F1200
CW output power (mW)	1200
Center wavelength (nm)	832±10
Spectral width (nm)	≤4
Threshold current (A)	≤280
Operating current (A)	≤1400
Operating voltage (V)	1.6~2.2
Slope efficiency (W/A)	1.1
Beam divergence θ×θ (deg.)	40×12
Wavelength temperature coefficient (nm/)	≤0.3
Emitting area (μm)	50×1
Lifetime(h)	10000
Package	C-mount/CT-Mount/TO3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clean Room

ESD test

LD Production Line

Visual inspection

Aging

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